Molecular Beam Epitaxy HgCdTe Scientist

Career opportunity for an experienced scientist with 15 or more years experience in the development of molecular beam epitaxy (MBE) HgCdTe growth technology for the manufacturing of infrared focal-plane array sensors.

Primary Responsibilities



The successful candidate should be capable of providing technical leadership to the MBE HgCdTe team

responsible for improving the material growth technology process.

This is a hands-on position; the emphasis is on MBE HgCdTe grwoth and characterization.

Applicants selected must be a US Citizen (Born or Naturalized).

Applicants may be subject to government security investigation and must meet eligibility requirements.

Skills/Experience



More than 15-years experience in MBE HgCdTe growth, ultrahigh vacuum equipment, and material characterization is required

Experiance as a program Principal Investigator is a must

Sucessful cadidate would be capable of defining the technical approach to a project and pursuing it with general direction from management

Training in semiconductor physics and infrared technology is a must

Education

Ph.D. in Physics, Electrical Engineering or Materials Science with fifteen or more years of related experience


Relocation Assistance: Yes

Security Clearance: Ability to obtain government security clearance

The work described in this position is ITAR controlled.
U.S. Citizen or Permanent Resident (Green Card) status is required.


EEO/AA/M/F/D/V Employer




How To Apply:

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