Senior Plasma Process Engineer

 

Varian Semiconductor Equipment Associates, Inc. is the leading supplier of ion implant equipment to semiconductor manufacturers, enabling them to pack more, higher performing transistors into computer chips that are revolutionizing the electronics industry. Customers have made Varian Semiconductor the market leader in ion implant because of its architecturally superior products that lower their costs and improve their productivity.  Varian Semiconductor operates globally and is headquartered in Gloucester, Massachusetts. More information can be found on Varian Semiconductor's web site at www.vsea.com.

 

VIISta PLAD

The VIISta PLAD is the first production-worthy plasma doping tool in the industry. The PLAD chamber's unique pulsed DC bias hardware design enables precise control of dopant energy and dose. The patented faraday dose control system ensures repeatable implant performance in high-volume manufacturing. In addition, the PLAD chamber has demonstrated up to 6-times greater throughput than traditional beamline or modified-source beamline technologies for ultra high-dose applications. Its low cost of ownership and manufacturability performance have made the VIISta PLAD system the product of choice for dual poly gate doping and other implant steps in DRAM manufacturing. We are looking for a new Plasma Team Member at our Corporate Headquarters in Gloucester, Massachusetts.

Senior Process Engineer – PLAD (plasma doping)

The Sr. Process Engineer is expected to plan, manage and drive CIP and development projects through investigation of advanced plasma processing techniques. In this position, you will be responsible for designing experiments, analyzing data, creating reports and making presentations on the results. In addition, you will be responsible for recommending and advising on the technical direction of potential application solutions consistent with market requirements. The ideal candidate will be able to manage a wide variety of tasks and solve the most difficult technical challenges through collaboration with other departments, including product support, R&D engineering and customer service. A thorough understanding of ion implant process and applications for CMOS, BiCMOS and Bipolar applications, a technical degree and 7+ years in a semiconductor fab is required.

Note: A strong understanding of CMOS device physics, CMOS process integration, wafer processing, materials science of ion implantation using plasma processing into semiconductors.

Ph.D. in Materials Science, Physical Chemistry, Applied Physics, Electrical Engineering, or Chemical Eng., with minimum 7+ years of experience in CMOS process development, CMOS device engineering, or front-end CMOS process integration position with an IC manufacturer, or in advanced CMOS process development with a major process equipment supplier for the semiconductor industry. Requires In-depth knowledge of interdependencies between key implant process parameters and electrical characteristics of CMOS devices. Hands-on experience of thin film and ion implant doping characterization techniques. Extensive knowledge of ion implant doping theory, defect recovery, doping qualification, ion implanter operation and maintenance. Understanding of unit processes immediately preceding and succeeding ion implantation (clean, PR strip, anneal) for fabrication of CMOS devices and of advanced metrology of ion implantation processes. Effective technical written, verbal communication skills and interpersonal skills are required. Position requires up to 25% travel to provide customer support in process problem solving, dose matching and yield optimization.

 

Please apply on-line at: http://www.vsea.com/HR/jobpost.nsf/home

 

This position involves access to export controlled technology which is subject to U.S. Department of Commerce export control regulations.  Otherwise qualified candidates must meet these export control requirements or a deemed export license from the Commerce Department before a final job offer can be extended.