Sr. Device Engineer

Duties:
Responsible for device physics and construction with CMOS image sensor, specifically in the area of 90nm – 130nm process flow. Also responsible for active and passive device design and characterization, as well as parametric test and data analysis. Duties include: bench probing and wafer electrical test; process and device simulations; electrical and optical 2D/3D simulation; pixel layout and technology development.

Education Required:
Ph.D or foreign equivalent in Electrical Engineering, Electronic Engineering or related field

Experience Required:
None

Alternate Requirements:
Master’s degree or foreign equivalent in Electrical Engineering, Electronic Engineering or related field and 3 years of experience in the position offered or 3 years of experience in a related occupation.

Special Requirements:
Must have experience and/or coursework/project background with: TCAD tools for 2D and 3D device process,
electrical, and optical simulation; EDA tools for schematics and layout design